WebThe thickness dependence of electrical resistivity of thin bismuth films deposited on to glass substrates has been studied in the temperature range 77 to 350 K. The structural studies show that films are polycrystalline with grain size increasing with thickness. The electrical resistivity decreases with increasing temperature. WebJul 1, 2015 · Figure 3 a–d shows the typical morphology of samples solidified under different magnetic fields, and the related low magnification images of the samples in both directions can be found in ESI 2. Apparently, the morphology of the bismuth antimony telluride matrix BST (lighter contrast) and the darker eutectic strips, which are a dual phase mixture of …
Giant magnetoresistance of Dirac plasma in high-mobility graphene
WebJan 1, 2015 · Semimetallic bismuth possesses an unusual electronic structure and an extremely small Fermi surface, which it is predicted can be suppressed to zero size by the application of hydrostatic pressure. ... technique for measuring quantum oscillations in low fields without compromising the ability to measure conventional resistivity, applicable to ... WebJun 9, 2015 · It is known that magnetic fields can affect how electricity is conducted through a solid. Resistivity sometimes increases by orders of magnitude in the presence of a … cit asset size
Studies of the electrical properties of bismuth oxide films
WebSep 9, 2024 · Temperature-dependent power factor of (Bi0.96Sn0.04)2Te2.7Se0.3 is found to increase by 1.1 times, and electrical resistivity reduced by 3.3 times as compared to pristine Bi2Te3. In the current work, growth and thermoelectric characterization of tin and selenium co-doped single crystal bismuth telluride have been carried out in the WebA significant reduction in the electrical resistivity was found for the co-doped (Bi 0.96 In 0.04) 2 Se 2.7 Te 0.3 sample, leading to an enhancement of the power factor (PF) and thermoelectric figure of merit (ZT) by a factor of about 8.0 and 4.1, respectively, as compared to the pristine Bi 2 Se 3 sample at 350 K. WebWe report on the production of 200 and 600 nm thick Bi films on mica substrate with 10 nm thick Sb sublayer between Bi and mica. Two types of films have been studied: block and single crystal. Films were obtained using the thermal evaporation cit asset based lender