WebAug 1, 2024 · The effect of carbon concentration on the strain state of GaN grown on Si substrate was evaluated. • The stress turns from compressive into tensile stress when the carbon concentration is higher than a critical point. • A possible mechanism is ascribed to the different incorporation sites of carbon atoms versus carbon concentrations. Keywords WebFeb 13, 2016 · By using Secondary Ion Mass Spectroscopy, it is found that AlGaN IBL have a strong effect in blocking the Si donor impurities originating from the Si substrate during the high temperature growth, which can decrease the leakage current while the breakdown voltage can be dramatically increased. Introduction

Nagayasu EGAWA University of Cambridge, Cambridge Cam

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Thermal stability of GaN on (1 1 1) Si substrate - ScienceDirect

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